20N60C3 TO247 Power Transistor

Specifications: FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650V Current – Continuous Drain (Id): @ 25°C 20.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max): @ Id, Vgs 190mOhm @ 13.1A, 10V Vgs(th) (Max): @ Id 3.9V @ 1mA Gate Charge (Qg) (Max): @ Vgs 114nC @ 10V Vgs (Max): ±20V Input Capacitance (Ciss) (Max): @ Vds 2400pF @ 25V Power Dissipation (Max): 208W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole